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Inchange Semiconductor

BUX66B Datasheet Preview

BUX66B Datasheet

Silicon NPN Power Transistor

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INCHANGE Semiconductor
isc Silicon NPN Power Transistors
isc Product Specification
BUX66B/C
DESCRIPTION
·Contunuous Collector Current-IC= -2A
·Power Dissipation-PD= 35W @TC= 25
·Collector-Emitter Saturation Voltage-
: VCE(sat)= -2.5V(Max)@ IC = -1A
APPLICATIONS
·Designed for high-speed switching and linear amplifier appli-
cation for high-voltage operational amplifiers, switching regu-
lators, converters,deflection stages and high fidelity amplifiers.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
BUX66B
BUX66C
-350
-400
V
VCEO
Collector-Emitter Voltage
BUX66B
BUX66C
-300
-350
V
VEBO
IC
ICP
IB
PC
TJ
Tstg
Emitter-Base Voltage
-6 V
Collector Current-Continuous
-2.0 A
Collector Current-Peak
-5.0 A
Base Current
-1.0 A
Collector Power Dissipation@TC=25
Junction Temperature
35
200
W
Storage Temperature
-65~200
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT
5.0 /W
isc websitewww.iscsemi.cn
1




Inchange Semiconductor

BUX66B Datasheet Preview

BUX66B Datasheet

Silicon NPN Power Transistor

No Preview Available !

INCHANGE Semiconductor
isc Silicon NPN Power Transistors
isc Product Specification
BUX66B/C
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS)
Collector-Emitter
Sustaining Voltage
BUX66B
BUX66C
IC= -200mA ; IB=0
-300
-350
V
VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -0.15A
VBE(sat) Base-Emitter Saturation Voltage
IC= -1A; IB= -0.15A
ICEO Collector Cutoff Current
VCE= -150V; IB= 0
BUX66B
VCB=-350V;VBE= 1.5V;
VCB=-350V;VBE= 1.5V;TC=100
ICEX Collector Cutoff Current
BUX66C
VCB=-400V;VBE= 1.5V;
VCB=-400V;VBE= 1.5V;TC=100
IEBO Emitter Cutoff Current
VEB= -6V; IC=0
-2.5 V
-1.5 V
-5.0 mA
-8.0
-10.0
-8.0
-10.0
mA
-1.0 mA
hFE DC Current Gain
IC= -1A; VCE= -5V
10 150
Switching Times
tr Rise Time
ts Storage Time
tf Fall Time
IC= -1A; IB1= -IB2= -0.1A;
VCC= -200V
0.6 μs
2.5 μs
0.6 μs
isc websitewww.iscsemi.cn
2


Part Number BUX66B
Description Silicon NPN Power Transistor
Maker Inchange Semiconductor
Total Page 2 Pages
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