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BUX66C - Silicon NPN Power Transistor

Download the BUX66C datasheet PDF. This datasheet also covers the BUX66B variant, as both devices belong to the same silicon npn power transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

Contunuous Collector Current-IC= -2A Power Dissipation-PD= 35W @TC= 25℃ Collector-Emitter Saturation Voltage- : VCE(sat)= -2.5V(Max)@ IC = -1A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-speed switching a

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (BUX66B-InchangeSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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BUX66A PNP Transistor INCHANGE
BUX60 NPN Transistor INCHANGE
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Other Datasheets by Inchange Semiconductor

Part Number Description
BUX66B Silicon NPN Power Transistor
BUX10A Silicon NPN Power Transistor
BUX10P Silicon NPN Power Transistor
BUX11N Silicon NPN Power Transistor
BUX11P Silicon NPN Power Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc Silicon PNP Power Transistors BUX66B/C DESCRIPTION ·Contunuous Collector Current-IC= -2A ·Power Dissipation-PD= 35W @TC= 25℃ ·Collector-Emitter Saturation Voltage- : VCE(sat)= -2.5V(Max)@ IC = -1A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high-speed switching and linear amplifier appli- cation for high-voltage operational amplifiers, switching regulators, converters,deflection stages and high fidelity amplifiers.