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BUX66A Datasheet PNP Transistor

Manufacturer: Inchange Semiconductor

Overview: isc Silicon PNP Power Transistors.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

·Contunuous Collector Current-IC= -2A ·Power Dissipation-PD= 35W @TC= 25℃ ·Collector-Emitter Saturation Voltage- : VCE(sat)= -2.5V(Max)@ IC = -1A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high-speed switching and linear amplifier appli- cation for high-voltage operational amplifiers, switching regulators, converters,deflection stages and high fidelity amplifiers.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BUX66 -200 VCBO Collector-Base Voltage V BUX66A -300 BUX66 -150 VCEO Collector-Emitter Voltage V BUX66A -250 VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -2.0 A ICP Collector Current-Peak -5.0 A IB Base Current -1.0 A PC Collector Power Dissipation@TC=25℃ 35 W TJ Junction Temperature Tstg Storage Temperature 200 ℃ -65~20 0 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 5.0 ℃/W BUX66/A isc website:.iscsemi.

1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage BUX66 BUX66A IC= -50mA ;

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