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BUX66B - Silicon NPN Power Transistor

General Description

Contunuous Collector Current-IC= -2A Power Dissipation-PD= 35W @TC= 25℃ Collector-Emitter Saturation Voltage- : VCE(sat)= -2.5V(Max)@ IC = -1A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-speed switching a

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isc Silicon PNP Power Transistors BUX66B/C DESCRIPTION ·Contunuous Collector Current-IC= -2A ·Power Dissipation-PD= 35W @TC= 25℃ ·Collector-Emitter Saturation Voltage- : VCE(sat)= -2.5V(Max)@ IC = -1A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high-speed switching and linear amplifier appli- cation for high-voltage operational amplifiers, switching regulators, converters,deflection stages and high fidelity amplifiers.