BUX66B
BUX66B is Silicon NPN Power Transistor manufactured by Inchange Semiconductor.
DESCRIPTION
- Contunuous Collector Current-IC= -2A
- Power Dissipation-PD= 35W @TC= 25℃
- Collector-Emitter Saturation Voltage-
: VCE(sat)= -2.5V(Max)@ IC = -1A
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for high-speed switching and linear amplifier appli- cation for high-voltage operational amplifiers, switching regulators, converters,deflection stages and high fidelity amplifiers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VCBO
Collector-Base Voltage
BUX66B BUX66C
VCEO
Collector-Emitter Voltage
BUX66B BUX66C
VEBO
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current
Collector Power Dissipation@TC=25℃
Junction Temperature
Tstg
Storage Temperature
VALUE UNIT
-350 V
-400
-300 V
-350
-6
-2.0...
