Datasheet Details
| Part number | D1187 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 106.06 KB |
| Description | 2SD1187 |
| Datasheet | D1187-InchangeSemiconductor.pdf |
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Overview: INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product.
| Part number | D1187 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 106.06 KB |
| Description | 2SD1187 |
| Datasheet | D1187-InchangeSemiconductor.pdf |
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Low Collector Saturation Voltage- : VCE(sat)= 0.5V(Max.) @ IC= 6A ·High Power Dissipation APPLICATIONS ·High power switching applications ·DC-DC converter and DC-AC inverter applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5V IC Collector Current-Continuous 10 A IBB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range 2A 80 W 150 ℃ -55~150 ℃ isc Website：www.iscsemi.cn Free Datasheet http://www.datasheet4u.com/ INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SD1187 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA ;
IB= 0 80 V VCE(sat) Collector-Emitter Saturation Voltage IC= 6A;
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| Part Number | Description |
|---|---|
| D1170 | 2SD1170 |