D1576 - Silicon NPN Power Transistor

Inchange Semiconductor

General Description

High Collector-Base Breakdown Voltage: V(BR)CBO= 1500V (Min.) High Switching Speed Wide Area of Safe Operation APPLICATIONS

Designed for horizontal deflection output applications.

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D1576 silicon npn power transistor by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	D1576
Manufacturer	Inchange Semiconductor
File Size	234.33 KB
Description	Silicon NPN Power Transistor
Datasheet	D1576 Datasheet

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www.DataSheet4U.com INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1576 DESCRIPTION ·High Collector-Base Breakdown Voltage: V(BR)CBO= 1500V (Min.) ·High Switching Speed ·Wide Area of Safe Operation APPLICATIONS ·Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCES Collector- Emitter Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current- Continuous w ww s c s .i 1500 V 1500 V 700 V 6 V 2 A 6 A 2.5 A n c . i m e ICM Collector Current-Peak IBM Base Current-Peak Collector Power Dissipation @ Ta=25℃ 2.