Datasheet Details
| Part number | D2110 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 234.54 KB |
| Description | 2SD2110 |
| Download | D2110 Download (PDF) |
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| Part number | D2110 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 234.54 KB |
| Description | 2SD2110 |
| Download | D2110 Download (PDF) |
|
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 2A ·High DC Current Gain : hFE= 1000(Min) @ IC= 2A, VCE= 3V APPLICATIONS ·Designed for low frequency power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) i.cnSYMBOL PARAMETER VALUE UNIT .iscsemVCBO Collector-Base Voltage 80 V wwwVCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 7V IC Collector Current-Continuous 4A ICM Collector Current-Peak Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 8A 25 W 2 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor www.DataSheet4U.com isc Silicon NPN Darlington Power Transistor isc Product Specification 2SD2110 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA ;
RBE= ∞ 80 V V(BR)CBO Collector-Base Breakdown Voltage IC= 0.1mA;
INCHANGE Semiconductor www.DataSheet4U.com isc Silicon NPN Darlington Power Transistor isc Product.
| Part Number | Description |
|---|---|
| D2140 | Power Transistor |