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D2140 - Power Transistor

General Description

Collector-Emitter Breakdown Voltage: V(BR)CEO= 140V(Min) Wide Area of Safe Operation Complement to Type 2SB1421 APPLICATIONS

Designed for high power amplifications.

Optimum for the output stage of a HiFi audio amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VAL

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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD2140 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 140V(Min) ·Wide Area of Safe Operation ·Complement to Type 2SB1421 APPLICATIONS ·Designed for high power amplifications. ·Optimum for the output stage of a HiFi audio amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage w w w s c s .i UNIT 140 V 140 V 5 V 7 A 12 A 80 W n c . i m e IC Collector Current-Continuous ICP Collector Current-Pulse Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 2.5 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.