Datasheet Details
| Part number | D2140 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 209.80 KB |
| Description | Power Transistor |
| Datasheet | D2140-InchangeSemiconductor.pdf |
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Overview: INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor.
| Part number | D2140 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 209.80 KB |
| Description | Power Transistor |
| Datasheet | D2140-InchangeSemiconductor.pdf |
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·Collector-Emitter Breakdown Voltage: V(BR)CEO= 140V(Min) ·Wide Area of Safe Operation ·plement to Type 2SB1421 APPLICATIONS ·Designed for high power amplifications.
·Optimum for the output stage of a HiFi audio amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage w w w s c s .i UNIT 140 V 140 V 5 V 7 A 12 A 80 W n c .
i m e IC Collector Current-Continuous ICP Collector Current-Pulse Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 2.5 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SD2140 TYP.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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D2140D | Standard Recovery Diode | nELL |
| Part Number | Description |
|---|---|
| D2110 | 2SD2110 |