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D428 - 2SD428

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) High Power Dissipation- : PC= 60W(Max)@TC=25℃ Complement to Type 2SB558 APPLICATIONS

Designed for power amplifier applications.

amplifier output stage.

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    INCHANGE Semiconductor isc Silicon NPN Power Transistors isc Product Specification 2SD428 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·High Power Dissipation- : PC= 60W(Max)@TC=25℃ ·Complement to Type 2SB558 APPLICATIONS ·Designed for power amplifier applications. ·Recommended for 40W high-fidelity audio frequency amplifier output stage. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 www.DataSheet.co.kr V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5V IC Collector Current-Continuous 7A IE Emitter Current-Continuous Collector Power Dissipation PC @TC=25℃ TJ Junction Temperature -7 A 60 W 150 ℃ Tstg Storage Temperature -65~150 ℃ isc Website：www.iscsemi.
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