D428 Datasheet | Specifications & PDF Download

isc Silicon NPN Power Transistors DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·High Power Dissipation- : PC= 60W(Max)@TC=

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Isc N-Channel MOSFET Transistor AOD4286 ·FEATURES ·With To-252(DPAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100%

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AOD4286/AOI4286 100V N-Channel MOSFET General Description Product Summary The AOD4286, AOI4286 uses trench MOSFET technology that is uniquely optim

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INCHANGE Semiconductor isc Silicon NPN Power Transistors isc Product Specification 2SD428 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)C

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AOD4286-VB AOD4286-VB Datasheet N-Channel 100 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) 100 RDS(on) () 0.114 at VGS = 10 V ID (A) 1

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■ Series V ● Type 24V Dimensions in mm (not to scale) Marking Line Filters Recommended PWB piercing plan 4-f2.0±0.1 14 41.5±1.0 15.0±0.1 4.0±1.0

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S T U/D428S S amHop Microelectronics C orp. Mar.8,2007 N-C hannel Logic Level E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S

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