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D45C10 Datasheet

Silicon PNP Power Transistors

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isc Silicon PNP Power Transistors
D45C10
DESCRIPTION
·Low Saturation Voltage
·Good Linearity of hFE
·Fast Switching Speeds
·Complement to Type D44C10
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for various specific and general purpose application
such as: output and driver stages of amplifiers operating at
frequencies from DC to greater than 1.0MHz series, shunt
and switching regulators; low and high frequency inverters/
converters and many others.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCES
Collector-Emitter Voltage
-90
V
VCEO
Collector-Emitter Voltage
-80
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-4
A
ICM
Collector Current-Peak
-6
A
IB
Base Current-Continuous
PC
Collector Power Dissipation
@TC=25
Tj
Junction Temperature
-1
A
30
W
150
Tstg
Storage Temperature Range
-55~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT
4.2 /W
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Inchange Semiconductor

D45C10 Datasheet Preview

D45C10 Datasheet

Silicon PNP Power Transistors

No Preview Available !

isc Silicon PNP Power Transistors
D45C10
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
VCE(sat) Collector-Emitter Saturation Voltage IC= -1A ;IB= -100mA
-0.5 V
VBE(sat) Base-Emitter Saturation Voltage
IC= -1A ;IB= -100mA
-1.3 V
ICES
Collector Cutoff Current
VCE= -90V, VBE= 0
-10 μA
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
-100 μA
hFE-1
DC Current Gain
IC= -0.2A ; VCE= -1V
25
hFE-2
DC Current Gain
IC= -2A ; VCE= -1V
10
fT
Current-Gain—Bandwidth Product IC= -20mA;VCE= -4V;ftest= 1MHz
40
MHz
Switching Times
tr
Rise Time
ts
Storage Time
tf
Fall Time
IC= -1A; IB1= -IB2= -0.1A;
VCC= -20V
0.2 μs
0.6 μs
0.3 μs
Notice
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.cn
2 isc & iscsemi is registered trademark


Part Number D45C10
Description Silicon PNP Power Transistors
Maker Inchange Semiconductor
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D45C10 Datasheet PDF






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