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Inchange Semiconductor

FRK250 Datasheet Preview

FRK250 Datasheet

N-Channel MOSFET Transistor

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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
FRK250
DESCRIPTION
·27A, 200V, RDS(on) = 0.1Ω
·Second Generation Rad Hard MOSFET Results
From New Design Concepts
APPLICATIONS
It is specially designed and processed to
exhibit minimal characteristic changes to total dose and neutron
exposures. Design and processing efforts are also directed to
enhance survival to heavy ion (SEE) and/or dose rate
(GAMMA DOT) exposure.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL ARAMETER
VALUE UNIT
VDSS
VGS
ID
Ptot
Tj
Tstg
Drain-Source Voltage (VGS=0)
200 V
Gate-Source Voltage
±20
V
Drain Current-continuous@ TC=3727 A
Total Dissipation@TC=25
150 W
Max. Operating Junction Temperature -55~150
Storage Temperature Range
-55~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Rth j-a
Thermal Resistance,Junction to Case
Thermal Resistance,Junction to Ambient
0.83 /W
30 /W
isc websitewww.iscsemi.cn
1 isc & iscsemi is registered trademark
PDF pdfFactory Pro
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Inchange Semiconductor

FRK250 Datasheet Preview

FRK250 Datasheet

N-Channel MOSFET Transistor

No Preview Available !

INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
FRK250
·ELECTRICAL CHARACTERISTICS (TC=25)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 1mA
VGS(TH) Gate Threshold Voltage
VDS= VGS; ID= 1mA
RDS(ON) Drain-Source On-stage Resistance VGS= 10V; ID= 17A
IGSS Gate Source Leakage Current
VGS= ±20V;VDS= 0
IDSS Zero Gate Voltage Drain Current VDS= 200V; VGS= 0
VSD Diode Forward Voltage
IF= 27A; VGS= 0
MIN MAX UNIT
200 V
2.0 4
0.1
V
Ω
100 nA
1 mA
1.8 V
isc websitewww.iscsemi.cn
2 isc & iscsemi is registered trademark
PDF pdfFactory Pro
www.fineprint.cn


Part Number FRK250
Description N-Channel MOSFET Transistor
Maker Inchange Semiconductor
Total Page 2 Pages
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