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Inchange Semiconductor

IRF220 Datasheet Preview

IRF220 Datasheet

N-Channel MOSFET Transistor

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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRF220
DESCRIPTION
·Drain Current ID=5A@ TC=25
·Drain Source Voltage-
: VDSS= 200V(Min)
·Static Drain-Source On-Resistance
: RDS(on) =0.8Ω(Max)
·High Speed Applications
APPLICATIONS
·Switching power supplies
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
VGS
ID
Ptot
Tj
Tstg
Drain-Source Voltage (VGS=0)
200 V
Gate-Source Voltage
±20
V
Drain Current-continuous@ TC=255 A
Total Dissipation@TC=25
40 W
Max. Operating Junction Temperature
150
Storage Temperature Range
-55~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
Rth j-a Thermal Resistance,Junction to Ambient
3.12
30
/W
/W
isc websitewww.iscsemi.cn
1 isc & iscsemi is registered trademark
PDF pdfFactory Pro
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Inchange Semiconductor

IRF220 Datasheet Preview

IRF220 Datasheet

N-Channel MOSFET Transistor

No Preview Available !

INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
·ELECTRICAL CHARACTERISTICS (TC=25)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID=250µA
VGS(TH) Gate Threshold Voltage
VDS= VGS; ID=250µA
RDS(ON) Drain-Source On-stage Resistance VGS=10V; ID=2.5A
IGSS Gate Source Leakage Current
VGS=±20V;VDS=0
IDSS Zero Gate Voltage Drain Current VDS=200V; VGS=0
VSD Diode Forward Voltage
IS=5A; VGS=0
Ciss Input Capacitance
Crss Reverse Transfer Capacitance
Coss Output Capacitance
VDS=25V;
VGS=0V;
fT=1MHz
tr Rise Time
td(on)
Turn-on Delay Time
tf Fall Time
ID=2.5A;
VDD=100V;
RL=50Ω
td(off)
Turn-off Delay Time
isc Product Specification
IRF220
MIN TYPE MAX UNIT
200 V
2.0 4.0 V
0.8 Ω
±100 nA
250 uA
2.0 V
450 600
40 80 pF
150 300
30 60
20 40
ns
30 60
50 100
isc websitewww.iscsemi.cn
2 isc & iscsemi is registered trademark
PDF pdfFactory Pro
www.fineprint.cn


Part Number IRF220
Description N-Channel MOSFET Transistor
Maker Inchange Semiconductor
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IRF220 Datasheet PDF






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