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IRF220 Datasheet

The IRF220 is a N-Channel Power MOSFET. Download the datasheet PDF and view key features and specifications below.

Part NumberIRF220
ManufacturerIntersil
Overview These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdo.
* 4.0A and 5.0A, 150V and 200V
* rDS(ON) = 0.8Ω and 1.2Ω
* SOA is Power Dissipation Limited
* Nanosecond Switching Speeds
* Linear Transfer Characteristics
* High Input Impedance
* Majority Carrier Device
* Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” .
Part NumberIRF220
DescriptionN-Channel Power MOSFET
ManufacturerFairchild Semiconductor
Overview . .
Part NumberIRF220
DescriptionN-Channel MOSFET Transistor
ManufacturerInchange Semiconductor
Overview ·Drain Current ID=5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.8Ω(Max) ·High Speed Applications APPLICATIONS ·Switching power supplies ABSOLUTE . (BR)DSS Drain-Source Breakdown Voltage VGS=0; ID=250µA VGS(TH) Gate Threshold Voltage VDS= VGS; ID=250µA RDS(ON) Drain-Source On-stage Resistance VGS=10V; ID=2.5A IGSS Gate Source Leakage Current VGS=±20V;VDS=0 IDSS Zero Gate Voltage Drain Current VDS=200V; VGS=0 VSD Diode Forward Voltage IS.
Part NumberIRF220
DescriptionN-Channel Power MOSFET
ManufacturerSamsung Semiconductor
Overview . .

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