IRF220 Datasheet N-channel Power MOSFETs

Manufacturer: Harris

Overview: Semiconductor October 1997 IRF220, IRF221, IRF222, IRF223 4.0A and 5.0A, 150V and 200V, 0.8 and 1.

Datasheet Details

Part number	IRF220
Manufacturer	Harris
File Size	68.17 KB
Description	N-Channel Power MOSFETs
Datasheet	IRF220-Harris.pdf

General Description

These are N-Channel enhancement mode silicon gate power ﬁeld effect transistors.

They are advanced power MOSFETs designed, tested, and guaranteed to withstand a speciﬁed level of energy in the breakdown avalanche mode of operation.

All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.

Key Features

4.0A and 5.0A, 150V and 200V.
rDS(ON) = 0.8Ω and 1.2Ω.
SOA is Power Dissipation Limited.
Nanosecond Switching Speeds.
Linear Transfer Characteristics.
High Input Impedance.
Majority Carrier Device.
Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER.

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