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IRF220 - N-Channel Power MOSFETs

General Description

These are N-Channel enhancement mode silicon gate power field effect transistors.

They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation.

Key Features

  • 4.0A and 5.0A, 150V and 200V.
  • rDS(ON) = 0.8Ω and 1.2Ω.
  • SOA is Power Dissipation Limited.
  • Nanosecond Switching Speeds.
  • Linear Transfer Characteristics.
  • High Input Impedance.
  • Majority Carrier Device.
  • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER.

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Datasheet Details

Part number IRF220
Manufacturer Harris
File Size 68.17 KB
Description N-Channel Power MOSFETs
Datasheet download datasheet IRF220 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Semiconductor October 1997 IRF220, IRF221, IRF222, IRF223 4.0A and 5.0A, 150V and 200V, 0.8 and 1.2 Ohm, N-Channel Power MOSFETs Features • 4.0A and 5.0A, 150V and 200V • rDS(ON) = 0.8Ω and 1.2Ω • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Majority Carrier Device • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER PACKAGE BRAND IRF220 TO-204AA IRF220 IRF221 TO-204AA IRF221 IRF222 TO-204AA IRF222 IRF223 TO-204AA IRF223 NOTE: When ordering, use the entire part number. Description These are N-Channel enhancement mode silicon gate power field effect transistors.