IRF222 Datasheet | Harris

Features - 4.0A and 5.0A, 150V and 200V - r DS(ON) = 0.8Ω and 1.2Ω - SOA is Power Dissipation Limited - Nanosecond Switching Speeds - Linear Transfer Characteristics - High Input Impedance - Majority Carrier Device - Related Literature - TB334 “Guidelines for Soldering Surface Mount ponents to PC Boards” Ordering Information PART NUMBER PACKAGE BRAND IRF220 TO-204AA IRF220 IRF221 TO-204AA IRF221 TO-204AA IRF223 TO-204AA IRF223 NOTE: When ordering, use the entire part number. Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA09600. Symbol Packaging DRAIN (FLANGE) JEDEC TO-204AA GATE (PIN 1) SOURCE (PIN 2) CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. Copyright © Harris Corporation 199& File Number 1567.2 IRF220, IRF221, IRF222,...