IRF222 Datasheet | Intersil

Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA09600. October 1997 Features - 4.0A and 5.0A, 150V and 200V - r DS(ON) = 0.8Ω and 1.2Ω - SOA is Power Dissipation Limited - Nanosecond Switching Speeds - Linear Transfer Characteristics - High Input Impedance - Majority Carrier Device - Related Literature - TB334 “Guidelines for Soldering Surface Mount ponents to PC Boards” Symbol Ordering Information PART NUMBER IRF220 IRF221 IRF222 IRF223 PACKAGE TO-204AA TO-204AA TO-204AA TO-204AA BRAND IRF220 IRF221 IRF222 IRF223 NOTE: When ordering, use the entire part number. Packaging JEDEC TO-204AA DRAIN (FLANGE) SOURCE (PIN 2) GATE (PIN 1) CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. Copyright © Harris Corporation 199& File Number IRF220, IRF221, IRF222, IRF223 Absolute Maximum Ratings TC = 25o C, Unless Otherwise Specified IRF220 200 200 5.0 3.0 20 ±20 40 0.32 85 -55 to 150 300 260 IRF221 150 150 5.0 3.0 20 ±20 40 0.32 85 -55 to 150 300 260 IRF222 200 200 4.0 2.5 16 ±20 40 0.32 85 -55 to 150 300 260 IRF223 150 150 4.0 2.5 16 ±20 40 0.32 85 -55 to 150 300 260 UNITS V V A A A V W W/o C m J o C o C o C Drain to Source Voltage (Note 1) - - - . . . .VDS Drain to Gate Voltage (RGS = 20kΩ) (Note 1) - . . VDGR Continuous Drain Current- - - - - . ID TC = 100o C - - - . . . ....