Datasheet4U Logo Datasheet4U.com

IRF330 Datasheet N-Channel MOSFET Transistor

Manufacturer: Inchange Semiconductor

General Description

·Drain Current ID=5.5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 400V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.0Ω(Max) ·Fast Switching Speed APPLICATIONS ·High voltage,high speed applications ·Off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS ID Ptot Tj Tstg Drain-Source Voltage (VGS=0) Gate-Source Voltage 400 ±20 V V Drain Current-continuous@ TC=25℃ 5.5 A Total Dissipation@TC=25℃ 75 W Max.

Operating Junction Temperature 150 ℃ Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 1.67 ℃/W isc website:www.iscsemi.cn 1 PDF pdfFactory Pro www.fineprint.cn INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF330 ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS=0;

Overview

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product.