Datasheet Summary
- 95879
AUTOMOTIVE MOSFET
Features
HEXFET® Power MOSFET
Designed to support Linear Gate Drive Applications 175°C Operating Temperature Low Thermal Resistance Junction
- Case Rugged Process Technology and Design Fully Avalanche Rated
VDSS = 55V RDS(on) = 8.0mΩ
Description
Specifically designed for use in linear automotive applications this HEXFET Power MOSFET utilizes a rugged planar process technology and device design, which greatly improves the Safe Operating Area (SOA) of the device. These Features
, coupled with 175°C junction operating temperature and low thermal resistance of 0.45C/W make the IRF3305 an ideal device for linear automotive...
