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IRF3305PBF - Power MOSFET

General Description

Specifically designed for use in linear automotive applications this HEXFET Power MOSFET utilizes a rugged planar process technology and device design, which greatly improves the Safe Operating Area (SOA) of the device.

Key Features

  • O IRF3305PbF HEXFET® Power MOSFET D O O O O O Designed to support Linear Gate Drive.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PD - 95758 AUTOMOTIVE MOSFET Features O IRF3305PbF HEXFET® Power MOSFET D O O O O O Designed to support Linear Gate Drive Applications 175°C Operating Temperature Low Thermal Resistance Junction - Case Rugged Process Technology and Design Fully Avalanche Rated Lead-Free VDSS = 55V G S RDS(on) = 8.0mΩ ID = 75A Description Specifically designed for use in linear automotive applications this HEXFET Power MOSFET utilizes a rugged planar process technology and device design, which greatly improves the Safe Operating Area (SOA) of the device. These features, coupled with 175°C junction operating temperature and low thermal resistance of 0.45C/W make the IRF3305 an ideal device for linear automotive applications.