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IRF430 Datasheet N-Channel MOSFET Transistor

Manufacturer: Inchange Semiconductor

General Description

·silicon Gate for fast switching at elevate ·rugged ·low drive requirements ·ease of paralleling ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·high speed applications such as Switching power supplies,AC and DCmotor controls relay and solenoid driver.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 500 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25℃ 4.5 A Ptot Total Dissipation@TC=25℃ 75 W Tj Max.

Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 0.83 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 30 ℃/W isc website:www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel Mosfet Transistor INCHANGE Semiconductor IRF430 ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS=0;

Overview

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRF430.