Seme LAB IRF430
N-Channel Power MOSFET
| Part No. | IRF430 |
|---|---|
| Datasheet | IRF430 Download |
| Manufacturer |  Seme LAB |
| Description | N-Channel Power MOSFET |
| Buy | Stock & Price |
MECHANICAL DATA
Dimensions in mm (inches) 40.01 (1.575) Max. N–CHANNEL POWER MOSFET 26.67 (1.050) Max. 4.47 (0.176) Rad. 2 Pls. 22.23 (0.875) Max. 11.43 (0.450) 6.35 (0.250) 1.09 (0.043) 0.97 (0.038) Dia. 30.40 (1.197) 29.90 (1.177) 12.19 (0.48) 11.18 (0.44) 1.63 (0.064) 1.52 (0.060) VDSS ID(cont) RDS(on) 500V 4.5A 1.5W 2 11.18 (0.440) 10.67 (0.420) 4.09 (0.161) 3.84 (0.151) 2 Pls 1FEATURES
16.97 (0.668) 16.87 (0.664)● HERMETICALLY SEALED TO–3 METAL PACKAGE
● SIMPLE DRIVE REQUIREMENTS Case – Drain TO–3 Metal Package Pin 1 – Gate Pin 2 – Source
● SCREENING OPTIONS AVAILABLE
ABSOLUTE MAXIMUM RATINGS
(Tcase = 25°C unless otherwise stated) VGS ID ID IDM PD EAS IAR dv/dt TJ , Tstg TL Gate – Source Voltage Continuous Drain Current (VGS = 0 , Tcase = 25°C) Continuous Drain Current (VGS = 0 , Tcase = 100°C) Pulsed Drain Current 1 Power Dissipation @ Tcase = 25°C Linear Derating Factor Single Pulse Avalanche Energy 2 Avalanche Current 2 Peak Diode Recovery 3 Operating and Storage Temperature...