Datasheet4U.com

IRF430 Datasheet PDF

International Rectifier IRF430

The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and diode recovery dv/dt capability.
Part No. IRF430
Datasheet IRF430 Download
Manufacturer
International Rectifier
Description N-Channel Power MOSFET
Buy Stock & Price
IRF430 datasheet page 1 preview

FEATURES

: n n n n n Repetitive Avalanche Ratings Dynamic dv/dt Rating Hermetically Sealed Simple Drive Requirements Ease of Paralleling

ABSOLUTE MAXIMUM RATINGS

Parameter ID @ VGS = 10V, TC = 25°C ID @ VGS = 10V, TC = 100°C I DM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt ➂ Operating Junction Storage Temperature Range Lead Temperature Weight For footnotes refer to the last page 4.5 3.0 18 75 0.6 ±20 1.1 4.5 — 3.5 -55 to 150 300 (0.063 in. (1.6mm) from case for 10s) 11.5 (typical) Units A W W/°C V mJ A mJ V/ns o C g 1 01/22/01 IRF430

ELECTRICAL CHARACTERISTICS

@ Tj = 25°C (Unless Otherwise Specified) Parameter BVDSS ∆BV DSS/∆TJ RDS(on) VGS(th) gfs IDSS Drain-to-Source Breakdown Voltage Temperature Coefficient of Breakdown Voltage Static Dr...
IRF430 page 2 preview IRF430 page 3 preview