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Inchange Semiconductor

IRF4905 Datasheet Preview

IRF4905 Datasheet

P-Channel MOSFET Transistor

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INCHANGE Semiconductor
isc P-Channel MOSFET Transistor
isc Product Specification
IRF4905
FEATURES
·Advanced Process Technology
·Ultra Low On-Resistance
·Dynamic dv/dt Rating
·175°C Operating Temperature
·Fast Switching
·P-Channel
·Fully Avalanche Rated
DESCRIPTION
·This benefit, combined with the fast switching speed and
ruggedized device .
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
VGS
Drain-Source Voltage
Gate-Source Voltage-Continuous
-55
±20
V
V
ID Drain Current-Continuous
-74 A
IDM Drain Current-Single Pluse
-260 A
PD Total Dissipation @TC=25
200 W
TJ
Max. Operating Junction Temperature
-55~175
Tstg Storage Temperature
-55~175
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Rth j-a
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
MAX
0.75
62
UNIT
/W
/W
isc websitewww.iscsemi.cn
1 isc & iscsemi is registered trademark
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www.fineprint.cn




Inchange Semiconductor

IRF4905 Datasheet Preview

IRF4905 Datasheet

P-Channel MOSFET Transistor

No Preview Available !

INCHANGE Semiconductor
isc P-Channel MOSFET Transistor
isc Product Specification
IRF4905
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= -0.25mA
VGS(th) Gate Threshold Voltage
RDS(on) Drain-Source On-Resistance
IGSS Gate-Body Leakage Current
IDSS Zero Gate Voltage Drain Current
VSD Forward On-Voltage
VDS= VGS; ID=-0.25mA
VGS= -10V; ID= -38A
VGS= ±20V;VDS= 0
VDS= -55V; VGS= 0
VDS=- 44V; VGS= 0; Tj= 125
IS= -38A; VGS= 0
MIN MAX UNIT
-55 V
-2 -4 V
0.02 Ω
±100
nA
-25
-250
μA
-1.6 V
·
isc websitewww.iscsemi.cn
2 isc & iscsemi is registered trademark
PDF pdfFactory Pro
www.fineprint.cn


Part Number IRF4905
Description P-Channel MOSFET Transistor
Maker Inchange Semiconductor
Total Page 2 Pages
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