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Inchange Semiconductor

IRF742 Datasheet Preview

IRF742 Datasheet

N-Channel MOSFET Transistor

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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRF742
DESCRIPTION
·Drain Current ID= 8A@ TC=25
·Drain Source Voltage-
: VDSS= 350V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 0.8Ω(Max)
·Fast Switching Speed
APPLICATIONS
·Designed especially for high voltage,high speed applications,
such as off-line switching power supplies , UPS,AC and DC
motor controls,relay and solenoid drivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL ARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage (VGS=0)
350 V
VGS Gate-Source Voltage
±20
V
ID Drain Current-continuous@ TC=258 A
Ptot Total Dissipation@TC=25
125 W
Tj Max. Operating Junction Temperature -55~150
Tstg Storage Temperature Range
-55~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
1.0 /W
Rth j-a Thermal Resistance,Junction to Ambient 80 /W
isc websitewww.iscsemi.cn
1 isc & iscsemi is registered trademark
PDF pdfFactory Pro
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Inchange Semiconductor

IRF742 Datasheet Preview

IRF742 Datasheet

N-Channel MOSFET Transistor

No Preview Available !

INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
IRF742
·ELECTRICAL CHARACTERISTICS (TC=25)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 0.25mA
VGS(TH) Gate Threshold Voltage
VDS= VGS; ID= 0.25mA
RDS(ON) Drain-Source On-stage Resistance VGS= 10V; ID= 5.2A
IGSS Gate Source Leakage Current
VGS= ±20V; VDS= 0
IDSS Zero Gate Voltage Drain Current VDS= 350V; VGS= 0
VSD Diode Forward Voltage
IF= 10A; VGS= 0
MIN MAX UNIT
350 V
24V
0.8 Ω
±500 nA
250 uA
2.0 V
isc websitewww.iscsemi.cn
2 isc & iscsemi is registered trademark
PDF pdfFactory Pro
www.fineprint.cn


Part Number IRF742
Description N-Channel MOSFET Transistor
Maker Inchange Semiconductor
Total Page 2 Pages
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