IRF7420PbF - HEXFET Power MOSFET

International Rectifier (now Infineon)

General Description

per silicon area.

Key Features

R’s Web site. IR WORLD.

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IRF7420PbF hexfet power mosfet by International Rectifier (now Infineon) - Datasheet Preview

Datasheet Details

Part number	IRF7420PbF
Manufacturer	International Rectifier (now Infineon)
File Size	150.95 KB
Description	HEXFET Power MOSFET
Datasheet	IRF7420PbF Datasheet

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Other Datasheets by International Rectifier (now Infineon)

Part Number	Description
IRF7420PBF-1	HEXFET Power MOSFET
IRF7420	HEXFET Power MOSFET
IRF7421D1	MOSFET & Schottky Diode
IRF7421D1PBF	FETKY MOSFET / Schottky Diode
IRF7422D2	MOSFET & Schottky Diode

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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l Ultra Low On-Resistance l P-Channel MOSFET l Surface Mount l Available in Tape & Reel l Lead-Free VDSS -12V PD - 95633A IRF7420PbF HEXFET® Power MOSFET RDS(on) max 14mΩ@VGS = -4.5V 17.5mΩ@VGS = -2.5V 26mΩ@VGS = -1.8V ID -11.5A -9.8A -8.1A Description These P-Channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing S 1 techniques to achieve the extremely low on-resistance S 2 per silicon area. This benefit provides the designer with an extremely efficient device for use in battery S 3 and load management applications.. G4 A 8D 7D 6D 5D The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications.