IRF7421D1 Datasheet | International Rectifier

.. PD 9.1411 PRELIMINARY l l l l MOSFET & Schottky Diode Co-packaged Power MOSFET and Schottky Diode Ideal For Synchronous Regulator Applications Generation V Technology SO-8 Footprint HEXFET ® FETKY T M A A D D D D VDSS = 30V RDS(on) = 0.035Ω Schottky Vf = 0.42V Description The FETKYTM family of co-packaged HEXFETs and Schottky diodes offer the designer an innovative board space saving solution for switching regulator applications. Generation 5 HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. bining this technology with International Rectifier's low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics. The SO-8 package is designed for vapor phrase, infra red or wave soldering techniques. To p V ie w S O...