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IRF820 - N-Channel MOSFET Transistor

General Description

Drain Current ID= 2.5A@ TC=25℃ Drain Source Voltage- : VDSS= 500V(Min) Static Drain-Source On-Resistance : RDS(on) = 3Ω(Max) Fast Switching Speed Simple Drive Requirements Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLI

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRF820 DESCRIPTION ·Drain Current –ID= 2.5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 3Ω(Max) ·Fast Switching Speed ·Simple Drive Requirements ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High current,high speed switching · Swith mode power supplies(smps) ·DC-AC converters for welding equipmentand uninterruptible power supplies and motor driver ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 500 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25℃ 2.5 A PD Power Dissipation@TC=25℃ 80 W Tj Max.