Datasheet Details
| Part number | ISCNH060D |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 263.16 KB |
| Description | N-Channel MOSFET Transistor |
| Datasheet | ISCNH060D-InchangeSemiconductor.pdf |
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Overview: isc N-Channel MOSFET Transistor.
| Part number | ISCNH060D |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 263.16 KB |
| Description | N-Channel MOSFET Transistor |
| Datasheet | ISCNH060D-InchangeSemiconductor.pdf |
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·motor drive, DC-DC converter, power switch and solenoid drive.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 100 A PD Total Dissipation @TC=25℃ 90 W TJ Max.
Operating Junction Temperature -55~175 ℃ Tstg Storage Temperature -55~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX 1.67 UNIT ℃/W ISCNH060D isc website：www.iscsemi.com isc & iscsemi is registered trademark 1 N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)DSS Drain-Source Breakdown Voltage VGS(th) Gate Threshold Voltage RDS(on) Drain-Source On-Resistance IGSS Gate-Body Leakage Current IDSS Zero Gate Voltage Drain Current VSD Forward On-Voltage CONDITIONS VGS= 0;
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