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ISCNH376L Datasheet N-channel MOSFET Transistor

Manufacturer: Inchange Semiconductor

Overview: isc N-Channel MOSFET Transistor ISCNH376L.

General Description

·motor drive, DC-DC converter, power switch and solenoid drive.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 500 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 72 A IDM Drain Current-Single Pluse 216 A PD Total Dissipation @TC=25℃ 500 W TJ Max.

Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX 0.25 UNIT ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)DSS Drain-Source Breakdown Voltage VGS(th) Gate Threshold Voltage RDS(on) Drain-Source On-Resistance IGSS Gate-Body Leakage Current IDSS Zero Gate Voltage Drain Current VSD Forward On-Voltage CONDITIONS VGS= 0;

Key Features

  • Drain Current : ID= 72A@ TC=25℃.
  • Drain Source Voltage : VDSS= 500V(Min).
  • Static Drain-Source On-Resistance : RDS(on) = 50mΩ(Max) @ VGS= 10V.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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