KSD5080 Overview
·High Breakdown Voltage- : IB= 1.2A VBE(sat) Base-Emitter Saturation Voltage IC= 6A; IB= 1.2A ICBO Collector Cutoff Current VCB= 800V.
| Part number | KSD5080 |
|---|---|
| Datasheet | KSD5080-InchangeSemiconductor.pdf |
| File Size | 131.80 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Silicon NPN Power Transistor |
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·High Breakdown Voltage- : IB= 1.2A VBE(sat) Base-Emitter Saturation Voltage IC= 6A; IB= 1.2A ICBO Collector Cutoff Current VCB= 800V.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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KSD5080 | Silicon NPN Power Transistor | NJS |
See all Inchange Semiconductor datasheets
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| KSD5002 | Silicon NPN Power Transistor |
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| KSD5004 | Silicon NPN Power Transistor |
| KSD5005 | Silicon NPN Power Transistor |
| KSD5006 | Silicon NPN Power Transistor |
| KSD5007 | Silicon NPN Power Transistor |
| KSD5010 | Silicon NPN Power Transistor |
| KSD5011 | Silicon NPN Power Transistor |