KSD526 transistor equivalent, silicon npn power transistor.
*Designed for power amplifier applications.
*Recommended for 20~25W high fidelity audio frequency
amplifier outp.
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V(Min)
*Good Linearity of hFE
*Collector Power Dissipation-
: PC= 30W(Max)@ TC= 25℃
*Complement to Type KSB596
APPLICATIONS
*Designed for power amplifier applications.
*Reco.
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