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KSD526 - Silicon NPN Power Transistor

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Datasheet Details

Part number KSD526
Manufacturer Inchange Semiconductor
File Size 137.47 KB
Description Silicon NPN Power Transistor
Datasheet download datasheet KSD526-InchangeSemiconductor.pdf

KSD526 Product details

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) Good Linearity of hFE Collector Power Dissipation- : PC= 30W(Max)@ TC= 25℃ Complement to Type KSB596 APPLICATIONS Designed for power amplifier applications. Recommended for 20~25W high fidelity audio frequency amplifier output stage applications.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Col

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