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KSD526 - Silicon NPN Power Transistor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) Good Linearity of hFE Collector Power Dissipation- : PC= 30W(Max)@ TC= 25℃ Complement to Type KSB596 APPLICATIONS

Designed for power amplifier applications.

Recommended for 20~25W high fidelity audio frequency a

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INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification KSD526 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Good Linearity of hFE ·Collector Power Dissipation- : PC= 30W(Max)@ TC= 25℃ ·Complement to Type KSB596 APPLICATIONS ·Designed for power amplifier applications. ·Recommended for 20~25W high fidelity audio frequency amplifier output stage applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range 80 80 5 4 0.4 30 150 -55~150 V V V A A W ℃ ℃ isc website：www.