KSD526 Silicon NPN Power Transistor

Inchange Semiconductor

Description

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification KSD526 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min). Good Linearity of hFE. Collector Power Dissipation- : PC= 30W(Max)@ TC= 25℃.

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Datasheet Specifications

Part number: KSD526
Manufacturer: Inchange Semiconductor
File Size: 137.47 KB
Datasheet: KSD526-InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* Designed for power amplifier applications.
* Recommended for 20~25W high fidelity audio frequency amplifier output stage applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage

KSD526 Distributors

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KSD526 Silicon NPN Power Transistor Inchange Semiconductor

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