KSD526 Datasheet | Fairchild Semiconductor

KSD526 NPN Epitaxial Silicon Transistor NPN Epitaxial Silicon Transistor Power Amplifier Applications - plement to KSB596 April 2006 1 TO-220 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings - Ta = 25°C unless otherwise noted Symbol Parameter VCBO VCEO VEBO IC IB PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Dissipation ( TC=25°C) Junction Temperature Storage Temperature - These ratings are limiting values above which the serviceability of any semiconductor device may by impaired. Electrical Characteristics TC = 25°C unless otherwise noted Symbol Parameter Test Condition ICBO IEBO BVCEO BVEBO h FE VCE(sat) VBE(on) f T Ccb Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain - Bandwidth Product Collector Output...