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KSD526 - NPN Epitaxial Silicon Transistor

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KSD526 NPN Epitaxial Silicon Transistor KSD526 NPN Epitaxial Silicon Transistor Power Amplifier Applications • Complement to KSB596 April 2006 1 TO-220 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings * Ta = 25°C unless otherwise noted Symbol Parameter VCBO VCEO VEBO IC IB PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Dissipation ( TC=25°C) Junction Temperature Storage Temperature * These ratings are limiting values above which the serviceability of any semiconductor device may by impaired.