KSD526
KSD526 is Silicon NPN Power Transistor manufactured by Inchange Semiconductor.
DESCRIPTION
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V(Min)
- Good Linearity of h FE
- Collector Power Dissipation-
: PC= 30W(Max)@ TC= 25℃
- plement to Type KSB596
APPLICATIONS
- Designed for power amplifier applications.
- Remended for 20~25W high fidelity audio frequency amplifier output stage applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC Collector Current-Continuous
IB Base Current-Continuous
Collector Power Dissipation @ TC=25℃
TJ Junction Temperature
Tstg Storage Temperature Range
80 80 5 4 0.4 30 150 -55~150
V V V A A W ℃ ℃ isc website：.iscsemi.cn
INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50m A; IB= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 10m A; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB=...
