KSD526 Description
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Good Linearity of hFE ·Collector Power Dissipation- : PC= 30W(Max)@ TC= 25℃ ·plement to Type KSB596 APPLICATIONS ·Designed for power amplifier applications.
- Part: KSD526
- Manufacturer: Inchange Semiconductor
- Size: 137.47 KB
Similar Part Number
| Manufacturer | Part Number | Description |
|---|---|---|
Fairchild |
KSD526 | NPN Epitaxial Silicon Transistor |