Datasheet Details
| Part number | KSD526 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 137.47 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | KSD526-InchangeSemiconductor.pdf |
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Overview: INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product.
| Part number | KSD526 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 137.47 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | KSD526-InchangeSemiconductor.pdf |
|
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Good Linearity of hFE ·Collector Power Dissipation- : PC= 30W(Max)@ TC= 25℃ ·plement to Type KSB596 APPLICATIONS ·Designed for power amplifier applications.
·Remended for 20~25W high fidelity audio frequency amplifier output stage applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range 80 80 5 4 0.4 30 150 -55~150 V V V A A W ℃ ℃ isc website：.iscsemi.cn 1 INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification KSD526 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
KSD526 | NPN Epitaxial Silicon Transistor | Fairchild Semiconductor |
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|---|---|
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| KSD5011 | Silicon NPN Power Transistor |