KSD526 Overview
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Good Linearity of hFE ·Collector Power Dissipation- : PC= 30W(Max)@ TC= 25℃ ·plement to Type KSB596 APPLICATIONS ·Designed for power amplifier applications.
KSD526 datasheet by Inchange Semiconductor.
| Part number | KSD526 |
|---|---|
| Datasheet | KSD526-InchangeSemiconductor.pdf |
| File Size | 137.47 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Silicon NPN Power Transistor |
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Good Linearity of hFE ·Collector Power Dissipation- : PC= 30W(Max)@ TC= 25℃ ·plement to Type KSB596 APPLICATIONS ·Designed for power amplifier applications.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
| KSD526 | NPN Epitaxial Silicon Transistor | Fairchild Semiconductor |
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