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KSD985 - Silicon NPN Power Transistor

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Datasheet Details

Part number KSD985
Manufacturer Inchange Semiconductor
File Size 133.24 KB
Description Silicon NPN Power Transistor
Datasheet download datasheet KSD985-InchangeSemiconductor.pdf

KSD985 Product details

Description

Collector Emitter Breakdown Voltage- : V(BR)CEO = 60V(Min.) DC Current Gain- : hFE = 2000(Min) @ IC= 1A Low Collector Saturation Voltage APPLICATIONS They are suitable for use to operate from IC without predriver, such as hammer driver.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 8V IC Collector Current-Continuous 1.5 A ICM Collector Curre

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