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KSD985 - Silicon NPN Power Transistor

General Description

Collector Emitter Breakdown Voltage- : V(BR)CEO = 60V(Min.) DC Current Gain- : hFE = 2000(Min) @ IC= 1A Low Collector Saturation Voltage APPLICATIONS

predriver, such as hammer driver.

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INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor isc Product Specification KSD985 DESCRIPTION ·Collector–Emitter Breakdown Voltage- : V(BR)CEO = 60V(Min.) ·DC Current Gain- : hFE = 2000(Min) @ IC= 1A ·Low Collector Saturation Voltage APPLICATIONS ·They are suitable for use to operate from IC without predriver, such as hammer driver. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 8V IC Collector Current-Continuous 1.5 A ICM Collector Current-Pulse 3.0 A IB Base Current Collector Power Dissipation Ta=25℃ PC Collector Power Dissipation TC=25℃ Ti Junction Temperature Tstg Storage Temperature Range 0.15 A 1.