Datasheet Details
| Part number | KTD2058 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 215.78 KB |
| Description | Silicon NPN Power Transistors |
| Datasheet |
 KTD2058 Datasheet
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| Part number | KTD2058 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 215.78 KB |
| Description | Silicon NPN Power Transistors |
| Datasheet |
KTD2058 Datasheet
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min.) ·Collector Power Dissipation : PC= 25 W@ TC= 25℃ ·Low Collector Saturation Voltage- : VCE(sat)= -1.0V(Max)@ (IC= -2A, IB= -0.2A) ·Complement to Type KTB1366 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage 60 VCEO Collector-Emitter Voltage 60 VEBO Emitter-Base Voltage 7 IC Collector Current-Continuous 3 IB Base Current-Continuous 0.5 UNIT V V V A A Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ 2 W 25 TJ Junction Temperature Tstg Storage Temperature Range 150 ℃ -55~150 ℃ KTD2058 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A;
IB= 0.2A VBE(on) Base-Emitter On Voltage IC= 0.5A;
isc Silicon NPN Power Transistor.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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KTD2058 | NPN Transistor | SeCoS |
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KTD2058 | TRIPLE DIFFUSED NPN TRANSISTOR | KEC |
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