Datasheet Summary
SEMICONDUCTOR
TECHNICAL DATA
TRIPLE DIFFUSED NPN TRANSISTOR
GENERAL PURPOSE APPLICATION.
Features
Low Saturation Voltage : VCE(sat)=1.0V(Max.) at IC=2A, IB=0.2A. plementary to KTB1366.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current
VCBO VCEO VEBO
IC IB
Collector Power Dissipation
Ta=25 Tc=25
Junction Temperature
Tj
Storage Temperature Range
Tstg
RATING 60 60 7 3 0.5 2 25 150
-55 150
UNIT V V V A A
LL M
GF B P
DIM MILLIMETERS
A 10.0+_ 0.3
B 15.0+_ 0.3
C 2.70 +_ 0.3
D 0.76+0.09/-0.05
E Φ3.2 +_ 0.2 F 3.0+_ 0.3
G 12.0+_...
