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KTD2058 - Silicon NPN Power Transistors

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min.) Collector Power Dissipation : PC= 25 W@ TC= 25℃ Low Collector Saturation Voltage- : VCE(sat)= -1.0V(Max)@ (IC= -2A, IB= -0.2A) Complement to Type KTB1366 Minimum Lot-to-Lot variations for robust device performance an

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min.) ·Collector Power Dissipation : PC= 25 W@ TC= 25℃ ·Low Collector Saturation Voltage- : VCE(sat)= -1.0V(Max)@ (IC= -2A, IB= -0.2A) ·Complement to Type KTB1366 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage 60 VCEO Collector-Emitter Voltage 60 VEBO Emitter-Base Voltage 7 IC Collector Current-Continuous 3 IB Base Current-Continuous 0.