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Inchange Semiconductor

MBR10200CT Datasheet Preview

MBR10200CT Datasheet

Schottky Barrier Rectifier

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Schottky Barrier Rectifier
INCHANGE Semiconductor
MBR10200CT
FEATURES
·Metal silicon junctionmajority carrier conduction
·Low Power Loss/High Efficiency
·High current capabilitylow forward voltage drop
·High surge capability
·Guardring for overvoltage protection
·High temperature soldering guaranteed
·RoHS product
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for low-voltage,high frequency invertersfree wheeling
and polarrity protection applications .
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE UNIT
VRRM
VRWM
VR
IF(AV)
IFRM
IFSM
IRRM
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(Rated VR) TC= 125
Peak Repetitive Forward Current
(Rated VR,Square Wave,20kHz) TC= 125
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions half-
wave, single phase, 60Hz)
Peak Repetitive Reverse Surge Current
(20μs, 1.0kHz)
200
10
32
120
0.5
V
A
A
A
A
TJ Junction Temperature
-65~150
Tstg Storage Temperature Range
-65~175
dv/dt Voltage Rate of Change (Rated VR)
10,000 V/μs
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




Inchange Semiconductor

MBR10200CT Datasheet Preview

MBR10200CT Datasheet

Schottky Barrier Rectifier

No Preview Available !

Schottky Barrier Rectifier
INCHANGE Semiconductor
MBR10200CT
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal Resistance,Junction to Case
MAX
1.5
UNIT
/W
ELECTRICAL CHARACTERISTICS (Pulse Test: Pulse Width=300μs,Duty Cycle1%)
SYMBOL
PARAMETER
CONDITIONS
VF
Maximum Instantaneous Forward Voltage
IF= 5A ; TC= 25
IF= 5A ; TC= 125
IR Maximum Instantaneous Reverse Current Rated DC Voltage, TC= 25
MAX
0.99
0.87
0.2
UNIT
V
mA
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark


Part Number MBR10200CT
Description Schottky Barrier Rectifier
Maker Inchange Semiconductor
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