MBR10200CT
FEATURES
- Metal silicon junction，majority carrier conduction
- Low Power Loss/High Efficiency
- High current capability，low forward voltage drop
- High surge capability
- Guardring for overvoltage protection
- High temperature soldering guaranteed
- Ro HS product
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for low-voltage,high frequency inverters，free wheeling and polarrity protection applications .
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VRRM VRWM
VR IF(AV)
IFRM
IFSM
IRRM
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage
Average Rectified Forward Current
(Rated VR) TC= 125℃
Peak Repetitive Forward Current
(Rated VR,Square Wave,20k Hz) TC= 125℃
Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60Hz)
Peak Repetitive Reverse Surge Current...
