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MBR10200 - Schottky Barrier Rectifier

Key Features

  • Metal silicon junction，majority carrier conduction.
  • Low Power Loss/High Efficiency.
  • High current capability，low forward voltage drop.
  • High surge capability.
  • Guardring for overvoltage protection.
  • High temperature soldering guaranteed.
  • RoHS product.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Schottky Barrier Rectifier INCHANGE Semiconductor MBR10200 FEATURES ·Metal silicon junction，majority carrier conduction ·Low Power Loss/High Efficiency ·High current capability，low forward voltage drop ·High surge capability ·Guardring for overvoltage protection ·High temperature soldering guaranteed ·RoHS product ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low-voltage,high frequency inverters，free wheeling and polarrity protection applications .