Inchange Semiconductor MBR10200CD
Schottky Barrier Rectifier
FEATURES
●Low Power Loss/High Efficiency●High current capability,low forward voltage drop
●High surge capability
●Guardring for overvoltage protection
●High temperature soldering guaranteed
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for low-voltage,high frequency inverters,free wheeling and polarity protection applications .ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRWM VR IF(AV) Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (Rated VR) TC= 125℃ 200 V 10 A Nonrepetitive Peak Surge Current IFSM (Surge applied at rated load conditions half- 120 A wave, single phase, 60Hz) TJ Junction Temperature -65~150 ℃ Tstg Storage Temperature Range -65~150 ℃ isc website: 1 isc & iscsemi is registered trademark Schottky Barrier Rectifier MBR10200CD THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 2.0 UNIT ℃...