MBR20100 Datasheet | Inchange Semiconductor

FEATURES - Metal of silicon rectifier, majonty carrier conduction - Guard ring for transient protection - Low power loss high efficiency - High Surge Capability,High Current Capability - Minimum Lot-to-Lot variations for robust device performance and reliable operation MAXIMUN RATINGS - Operating Temperature: -55C to +150C - Storage Temperature: -55C to +150C ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRWM VR(RMS) Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltag IF(AV) IFSM Average Rectified Forward Current (Rated VR) TC= 135℃ Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60Hz) 100 70 20 150 TJ Junction Temperature -55~150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：.iscsemi. 1 isc & iscsemi is registered trademark Schottky Barrier...