MJ10012T - Silicon NPN Power Transistor

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Inchange Semiconductor

Datasheet Details

Part number	MJ10012T
Manufacturer	Inchange Semiconductor
File Size	216.74 KB
Description	Silicon NPN Power Transistor
Datasheet	MJ10012T Datasheet
Additional preview pages of the MJ10012T datasheet.

Product details

Description

Collector-Emitter Sustaining Voltage- VCEO(SUS)= 400V(Min) High Power Dissipation DARLINGTON 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Automotive ignition Switching regulator Motor control applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 600 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 8 V I

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Published: Nov 8, 2016 |