Datasheet Details
| Part number | MJ4030 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 111.71 KB |
| Description | Silicon PNP Darlingtion Power Transistor |
| Download | MJ4030 Download (PDF) |
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| Part number | MJ4030 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 111.71 KB |
| Description | Silicon PNP Darlingtion Power Transistor |
| Download | MJ4030 Download (PDF) |
|
|
|
·With TO-3 package ·Respectively complement to type MJ4035 ·DARLINGTON ·High DC current gain APPLICATIONS ·For use as output devices in complementary general purpose amplifier applications.
ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL VCBO VCEO VEBO IC IB B MJ4030 PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation@TC=25℃ Junction Temperature Storage Temperature VALUE -60 -60 -5 -16 http://www.DataSheet4U.net/ UNIT V V V A A W ℃ ℃ -0.5 150 200 -55~200 PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case MAX 1.17 UNIT ℃/W isc Website：www.iscsemi.cn datasheet pdf - http://www.DataSheet4U.net/ INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlingtion Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MJ4030 MAX UNIT VCEO Collector-Emitter Breakdown Voltage IC=-100mA;
IB= 0 B -60 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC=-10A;
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlingtion Power.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
MJ4030 | Power Transistors | Mospec |
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MJ4030 | (MJ4030 - MJ4032) MEDIUM POWER COMPLEMENTARY SILICON TRANSISTORS | Comset Semiconductors |
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MJ4030 | Power Transistor | Motorola |
| Part Number | Description |
|---|---|
| MJ4031 | Silicon PNP Darlingtion Power Transistor |
| MJ4032 | Silicon PNP Darlingtion Power Transistor |
| MJ431 | Silicon NPN Power Transistor |