| Part Number | MJ4030 Datasheet |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview | ·With TO-3 package ·Respectively complement to type MJ4035 ·DARLINGTON ·High DC current gain APPLICATIONS ·For use as output devices in complementary general purpose amplifier applications. ABSOLUTE M. YMBOL PARAMETER CONDITIONS MIN MJ4030 MAX UNIT VCEO Collector-Emitter Breakdown Voltage IC=-100mA; IB= 0 B -60 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC=-10A; IB=-40mA -2.5 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC=-16A; IB=-80mA -4 V VBE(sat) Base-Emitter S. |
MJ4030 Datasheet and Specifications PDF
The MJ4030 is a Silicon PNP Darlingtion Power Transistor.
| Part Number | MJ4030 Datasheet |
|---|---|
| Description | (MJ4030 - MJ4032) MEDIUM POWER COMPLEMENTARY SILICON TRANSISTORS |
| Manufacturer | Comset Semiconductors |
| Overview |
PNP MJ4030 – MJ4031 – MJ4032 MEDIUM POWER COMPLEMENTARY SILICON TRANSISTORS
They are silicon epitaxial-base PNP power transistors in monolithic Darlington configuration and are mounted in Jedec TO-3 m.
PNP MJ4030 * MJ4031 * MJ4032 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol VCEO Ratings Collector-Emitter Voltage (*) Collector Cutoff Current Test Condition(s) IC=-100 mA, IB=0 VCE=-30 Vdc, IB=0 VCE=-40 Vdc, IB=0 VCE=-50 V, IB=0 VBE=-5.0 V, IC=0 V. |
| Part Number | MJ4030 Datasheet |
|---|---|
| Description | Power Transistors |
| Manufacturer | Mospec Semiconductor |
| Overview | A A A . . |
| Part Number | MJ4030 Datasheet |
|---|---|
| Description | Power Transistor |
| Manufacturer | Motorola Semiconductor |
| Overview | . . |