MJ4030 Overview
Description
With TO-3 package - Respectively complement to type MJ4035 - DARLINGTON - High DC current gain APPLICATIONS - For use as output devices in complementary general purpose amplifier applications. SYMBOL VCBO VCEO VEBO IC IB B MJ4030 PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation@TC=25℃ Junction Temperature Storage Temperature VALUE -60 -60 -5 -16 UNIT V V V A A W ℃ ℃ -0.5 150 200 -55~200 PC TJ Tstg SYMBOL Rth j-c PARAMETER isc Website： datasheet pdf - INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlingtion Power Transistor TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MJ4030 MAX UNIT VCEO Collector-Emitter Breakdown Voltage IC=-100mA; IB= 0 B -60 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC=-10A; IB=-40mA -2.5 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC=-16A; IB=-80mA -4 V VBE(sat) Base-Emitter Saturation Voltage IC=-5A; IB=-400mA -3 V VBE(on) ICER Base-Emitter On voltage IC=-10A ; VCE=-3V VCB=-60V; RBE= 1KΩ; VCB=-60V; RBE= 1KΩ; TC= 150℃ VCE=-30V; IB=0 -3 -1 -5 -3 V Collector Cutoff Current mA ICEO Collector Cutoff current mA IEBO Emitter Cut-off current VEB=-5V; IC= 0 -5 mA hFE DC Current Gain IC=-10A ; VCE=-3V 1000 isc Website： 2 datasheet pdf.
