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MJ4031 Datasheet Silicon PNP Darlingtion Power Transistor

Manufacturer: Inchange Semiconductor

Overview: INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor.

General Description

·With TO-3 packaging ·Very high DC current gain ·Monolithic darlington transistor with integrated antiparallel collector-emitter diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Electronic ignition ·Alternator regulator ·Motor controls ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO VEBO IC ICM IB PD Tj Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Max.Collector Current-Continuous Base Current- Continuous Collector Power Dissipation Max.Junction Temperature -80 V -80 V -5 V -15 A -20 A -0.5 A 150 W 200 ℃ Tstg Storage Temperature Range -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 1.17 ℃/W isc website: www.iscsemi.com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor MJ4031 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -100mA, IB= 0 VCE(sat)1 Collector-Emitter Saturation Voltage IC= -10A ,IB=-40mA VCE(sat)2 Collector-Emitter Saturation Voltage IC= -16A ,IB=- 80mA VBE(on) Base-Emitter Saturation Voltage IC= -10A ,VCE= -3.0V ICEO Collector Cutoff Current VCE=-40V, IB= 0 IEBO Emitter Cutoff Current VEB=-5V;

IC= 0 hFE-1 DC Current Gain IC=-10A ;

VCE=-3V MIN MAX UNIT -80 V -2.5 V -4.0 V -3.0 V -3.0 mA -5.0 mA 1000 NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.