MJD128 - Silicon PNP Darlington Power Transistor

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Inchange Semiconductor

Datasheet Details

Part number	MJD128
Manufacturer	Inchange Semiconductor
File Size	206.41 KB
Description	Silicon PNP Darlington Power Transistor
Datasheet	MJD128 Datasheet
Additional preview pages of the MJD128 datasheet.

Product details

Description

High DC Current Gain- : hFE = 1000(Min)@ IC= -4A Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -120V(Min) DPAK for Surface Mount Applications Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose amplifier and low speed switching applications.ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage -120 VCEO Collector-Emitter Voltage -120 VEBO Emitter-Ba

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Published: Nov 8, 2016 |