MJD128 transistor equivalent, silicon pnp darlington power transistor.
*Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS
*Designed for .
*High DC Current Gain-
: hFE = 1000(Min)@ IC= -4A
*Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = -120V(Min)
*DPAK for Surface Mount Applications
*Minimum Lot-to-Lot variations for robust device performance
and reliable operation.
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