MJD128T4G - Complementary Darlington Power Transistor

onsemi

Key Features

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MJD128T4G complementary darlington power transistor by onsemi - Datasheet Preview

Datasheet Details

Part number	MJD128T4G
Manufacturer	onsemi
File Size	101.80 KB
Description	Complementary Darlington Power Transistor
Datasheet	MJD128T4G Datasheet

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www.DataSheet4U.com MJD128T4G (PNP) Preferred Device Complementary Darlington Power Transistor DPAK For Surface Mount Applications Features http://onsemi.com ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MAXIMUM RATINGS Rating Symbol VCEO VCB VEB Continuous Peak IC IB PD PD TJ, Tstg Value 120 120 5 8 16 120 20 0.16 1.75 0.014 −65 to + 150 Unit Vdc Vdc Vdc Adc mAdc W W/°C W W/°C °C Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector Current − Base Current Total Power Dissipation @ TC = 25°C Derate above 25°C Total Power Dissipation* @ TA = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Designed for general purpose amplifier and low speed switching applications.