Part MJD128
Description Silicon PNP Darlington Power Transistor
Category Transistor
Manufacturer Inchange Semiconductor
Size 206.41 KB
Inchange Semiconductor

MJD128 Overview

Description

High DC Current Gain- : hFE = 1000(Min)@ IC= -4A - Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -120V(Min) - DPAK for Surface Mount Applications - Minimum Lot-to-Lot variations for robust device performance and reliable operation.